Projects
Epitaxial Growth and Characterization of III-Nitride and III-Oxide Alloys
Synthesis of AlGaN thin films via molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Optical metrology of nitride and oxide semiconductors, including spectroscopic ellipsometry, UV-Vis spectroscopy, and photoluminescence spectroscopy, for defect identification, determination of bandgaps, and extraction of dielectric functions. Investigation of electrical transport in AlScN for lattice-matched device applications.
Deep-UV Photonics and Optoelectronics
Design and fabrication of UVC lasers targeting wavelengths around 270 nm and far-UVC LEDs with emission below 240 nm. Heterostructure design and microfabrication process development to improve carrier injection efficiency and light extraction efficiency for next-generation solid-state UV light sources.
Ultra-Wide Bandgap and Colossal Bandgap Power Electronics
Development of high-breakdown, low on-resistance AlGaN pin diodes and α-(Al,Ga)2O3-based transistors and diodes with band gaps up to 8.8 eV. Optimization of nanofabrication techniques to minimize ohmic contact resistance, suppress reverse leakage, and implement field-management strategies for high-performance UWBG/CBG power architectures.